PRODUCTS / Detectors







Materials I Detectors I Electronics
TYPE RADIATION DETECTED ENERGY DOMAIN ENERGY RESOLUTION EFFICIENCY ADVANTAGES / DRAWBACK
Cdte X, gamma,beta, thermal, neutron,
counter & spectrometer.
From few keV to 1Mev From counter grade to very high resolution High (depending on structure and thickness) Room temperature operation
Pixel imaging
CZT Crystal selection necessary, yield and uniformity Lower noise
Higher bias voltage than CdTe
Csl-Si Only in probe Gamma From 80keV to 10MeV Better than equivalent scintillator with photomultiplier Very high
(size from 5mm to 50x50mm_)
Low power, no high voltage.
Not suitable for low energy
Silicon Dosimetry, X, gamma, neutron From 20keV to several MeV for gamma and 14MeV neutrons Not applicable, gives a flat biological response versus energy, in agreement with international regulation.
This detector can work both in pulse and current mode over a very large flux domain.
Replaced Geiger Muller detector in dosimetry.

> CdTe detectors documentation

• CdTe and CZT:

For application like X-ray diffraction, X-ray fluorescence, bone densitometry, surgical probes, custom inspection systems, radiation monitoring for nuclear safeguard, and all other activities using nuclear radiations.

These semiconductor detectors allow direct conversion of radiations into electric signals.
Due to its huge experience in the growing and manufacturing technique of CdTe and CZT crystal, Eurorad is able to produce high quality components. Our detectors achieve very high sensitivity, good spectroscopic performances for X and gamma rays at room temperature operation and very high radio-resistance. This type of detector has a low bias voltage (10 to 100V) and is available in various sizes from 1mm3 (planar) to 500mm3 (hemispherical)
CdZnTe: Low energy spectrometry < 6 keV; High working bias voltage, typically 200V to 400V

CdTe: Low bias voltage, typically 50V to100V; Good energy resolution from 15 keV to 700 keV
More info on CdTe and CZT

- Counters: (Standard CdTe production)
  TYPE AREA THICKNESS BIAS VOLTAGE (V)
C.1.1.1. 1 x 1 1 mm 5 – 50
C.2.2.1. 2 x 2 1 mm 5 – 50
C.2.2.2. 2 x 2 2 mm 5 – 50
C.5.5.1. 5 x 5 1 mm 5 – 50
C.5.5.2. 5 x 5 2 mm 5 – 50
C.5.5.3. 5 x 5 3 mm 5 – 50
C.5.5.5. 5 x 5 5 mm 5 – 50
C.10.10.1. 10 x 10 1 mm 5 – 50
C.10.10.2. 10 x 10 2 mm 5 – 50
C.10.10.3. 10 x 10 3 mm 5 – 50
C.10.10.5. 10 x 10 5 mm 50 – 500
C.10.10.10. 10 x 10 10 mm 50 – 500
Standard grade: P/V < 1.5; Ultimate grade: 1.5 ≤ P/V < 2
- Planar spectrometer: (Standard CdTe production)
  TYPE GRADE AREA (mm) THICKNESS BIAS VOLTAGE (V) FWHM (keV)
S.1.1.1. Standard 1 x 1 1 mm 30 - 50 6 – 10
Ultimate 1 x 1 1 mm 30 - 50 Below 6
S.2.2.1. Standard 2 x 2 1 mm 30 - 50 6 – 10
Ultimate 2 x 2 1 mm 30 - 50 Below 6
S.2.2.2. Standard 2 x 2 2 mm 50 - 100 8 - 12
Ultimate 2 x 2 2 mm 50 - 100 5 - 8
S.5.5.1. Standard 5 x 5 1 mm 30 - 50 6 – 10
Ultimate 5 x 5 1 mm 30 - 50 Below 6
S.5.5.2. Standard 5 x 5 2 mm 50 - 100 8 - 12
Ultimate 5 x 5 2 mm 50 - 100 5 - 8
S.5.5.3. Standard 5 x 5 3 mm 50 - 150 8 - 12
Ultimate 5 x 5 3 mm 50 - 150 5 - 8
Standard grade: 2 ≤ P/V < 3; Ultimate grade: P/V ≥ 3
- Different types of mounting available:
TO39 box C1.1.1 to C5.5.5
S1.1.1 to S 5.5.3
Aluminium box
with BNC connector
C.1.1.1 to C.10.10.10
S.1.1.1 to S.5.5.3
PCB holder All types
Array All types
  X-Y matrixes All types
Other sizes, shapes and mountings on request
- Large volume hemispheric detectors:

hemi 65

hemi 500

Due to the progress achieved in the quality of the II-VI crystal Eurorad has developed large volume (up to 500 mm3) gamma-ray detectors of hemispherical structure presenting good energy resolution even at 662 keV

Contrary to conventional detectors, the special electrode design creates in these devices a logarithmic electric field. As a consequence, these sensors work in the single charge collection mode.

Thanks to computer simulation, Eurorad has reached the optimal structure and size for hemispheric detectors. This make possible to use them at high fields with long term stability and without any dielectric polarization



Active volume 65 to 500mm3
Sensitive thickness 2,5 or 5 mm
Bias voltage 300 or 1200 V
Energy resolution at 122keV Less than 30keV
Peak to valley ratio 1,5 to 3
These detector are only available upon request.
- Pixelated detectors:
We are also offering a new generation of detectors, based on both CdTe and CdZnTe, which uses an integrated pixel structure with very thick absorption path for the radiations, i.e. in excess of 6.0 mm. These new structures open the route to integrated detector arrays which offer, when compared with conventional planar detectors, very good energy resolution, and very high efficiency in the full energy peak.

If you have any special requirements, contact our R & D department and we will help you to design your product.
Special devices are also available to improve detector's spectroscopic performances (see electronics section)
> detectors PDF.

• Silicon detectors:
Our silicon detectors are manufactured by the most advanced technology. The starting materials are choosen in order to obtain the best results for a given application.
More info on Silicon detector

- Silicon detectors for radiation dosimetry:
Different sizes (7 to 100 mm2) are available, all delivered with correcting filters in order to reach a flat dose response to energy. X, Gamma or Beta-ray detectors are also available.

  TYPE CONTACTS PINS ACTIVE SURFACE COVER ENERGY FILTER LINEAR RESPONSE
SI007-1 Vertical 7 mm 2 black cover No 60keV-1,5MeV
SI007-2 Horizontal 7 mm 2 black cover No 60keV-1,5MeV
SI007-3 Vertical 7 mm 2 black cover Yes 60keV-1,5MeV
SI007-4 Horizontal 7 mm 2 black cover Yes 60keV-1,5MeV
SI007-7 Horizontal 7 mm 2 alu cover Yes 20keV-1,5MeV
  SI100 Vertical 100 mm 2 black cover Yes 60keV-1,5MeV

- Hardened silicon detectors for current mode operation:

These 3.0 x 3.0 mm2 detectors give a constant current under radiation, when in excess of an accumulated dose of 10 KGy of gammas or fast electrons. These diodes can be used for very high dose measurements or associated in arrays for imaging applications.
These detectors are available upon request.

- Silicon detectors for X-ray spectrometry:

Due to the absorption coefficient of X-rays in silicon (Z=14), the application domain is, in practice, limited to energies below 60 keV. The achieved performance of these devices depends on the size of the detector (5 to 100 mm2). At room temperature, the best energy resolution achieved is around 1 keV (for 6 keV gammas)
These detectors are available upon request.


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